Stock: 2000
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 16.35 | ₹ 49,050.00 |
| 1000 | ₹ 18.81 | ₹ 18,810.00 |
| 500 | ₹ 22.90 | ₹ 11,450.00 |
| 100 | ₹ 29.44 | ₹ 2,944.00 |
| 10 | ₹ 32.73 | ₹ 327.30 |
| 1 | ₹ 48.87 | ₹ 48.87 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 20 V | |
| Continuous Drain Current at 25C | 1.7A (Ta) | |
| Gate Drive Voltage Range | 2.5V, 4.5V | |
| Max On-State Resistance | 79mOhm @ 1.7A, 4.5V | |
| Max Threshold Gate Voltage | 400mV @ 250µA | |
| Max Gate Charge at Vgs | 7.2 nC @ 4.5 V | |
| Maximum Gate Voltage | ±8V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 340mW (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-23 | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Supports a continuous drain current (Id) of 1.7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 7.2 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 7.2 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23 ensuring device integrity. Highest power dissipation 340mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 7.2 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 79mOhm @ 1.7A, 4.5V for MOSFET criteria. Manufacturer package type SOT-23 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 400mV @ 250µA for MOSFET threshold level.
