Stock: 1
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 25.59 | ₹ 25,590.00 |
| 500 | ₹ 31.15 | ₹ 15,575.00 |
| 100 | ₹ 40.05 | ₹ 4,005.00 |
| 10 | ₹ 44.50 | ₹ 445.00 |
| 1 | ₹ 66.75 | ₹ 66.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 46A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 16mOhm @ 46A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 50 nC @ 4.5 V | |
| Maximum Gate Voltage | ±12V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 50W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | TO-252 | |
| Component Housing Style | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Description
Supports a continuous drain current (Id) of 46A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 50 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 50 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type TO-252 ensuring device integrity. Highest power dissipation 50W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 50 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 16mOhm @ 46A, 4.5V for MOSFET criteria. Manufacturer package type TO-252 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±12V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
