Stock: 1
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 22.30 | ₹ 66,900.00 |
| 1000 | ₹ 25.64 | ₹ 25,640.00 |
| 500 | ₹ 31.21 | ₹ 15,605.00 |
| 100 | ₹ 40.13 | ₹ 4,013.00 |
| 10 | ₹ 44.59 | ₹ 445.90 |
| 1 | ₹ 66.89 | ₹ 66.89 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 12A (Ta) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 26mOhm @ 9A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA (Min) | |
| Max Gate Charge at Vgs | 9 nC @ 4.5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 1425 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 5W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | DFN5x6 | |
| Component Housing Style | DFN5x6 |
Description
Supports a continuous drain current (Id) of 12A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 9 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 9 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1425 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 1425 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case DFN5x6 providing mechanical and thermal shielding. Enclosure type DFN5x6 ensuring device integrity. Highest power dissipation 5W (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 9 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 26mOhm @ 9A, 10V for MOSFET criteria. Manufacturer package type DFN5x6 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA (Min) for MOSFET threshold level.
