Stock: 1
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 25.81 | ₹ 77,430.00 |
| 1000 | ₹ 29.68 | ₹ 29,680.00 |
| 500 | ₹ 36.13 | ₹ 18,065.00 |
| 100 | ₹ 46.46 | ₹ 4,646.00 |
| 10 | ₹ 51.62 | ₹ 516.20 |
| 1 | ₹ 77.43 | ₹ 77.43 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 200 V | |
| Continuous Drain Current at 25C | 4.6A (Ta) | |
| Gate Drive Voltage Range | 6V, 10V | |
| Max On-State Resistance | 118mOhm @ 1A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 13 nC @ 6 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 626 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 5W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-DFN (5x6) | |
| Component Housing Style | 8-PowerVDFN |
Description
Supports a continuous drain current (Id) of 4.6A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 200 V. Accommodates drive voltage specified at 6V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 13 nC @ 6 V gate charge at Vgs for enhanced switching efficiency. Upholds 13 nC @ 6 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 626 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 626 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case 8-PowerVDFN providing mechanical and thermal shielding. Enclosure type 8-DFN (5x6) ensuring device integrity. Highest power dissipation 5W (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 13 nC @ 6 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 118mOhm @ 1A, 10V for MOSFET criteria. Manufacturer package type 8-DFN (5x6) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
