Stock: 3
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 143.29 | ₹ 143.29 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | * | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 100 V | |
| Continuous Drain Current at 25C | 55A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 21mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | - | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | TO-263 | |
| Component Housing Style | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Description
Supports a continuous drain current (Id) of 55A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type TO-263 ensuring device integrity. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 21mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series *. Manufacturer package type TO-263 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.