V751DB40

V751DB40
Attribute
Description
Manufacturer Part Number
V751DB40
Manufacturer
Description
VARISTOR 1.2KV 40KA BLADE TYPE
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line DB
IC Encapsulation Type Bulk
Availability Status Active
Peak AC Voltage Rating 750 V
Peak DC Voltage Limit 970 V
Min Clamp Voltage 1.08 kV
Typical Varistor Voltage 1.2 kV
Max Clamp Voltage 1.32 kV
Surge Current Tolerance 40 kA
Stored Energy Capacity 1050J
Electrical Circuit Count 1
Capacitance at Specific Hz 1800 pF @ 1 MHz
Ambient Temp Range -55°C ~ 85°C (TA)
Key Product Highlights -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Chassis Mount
Component Housing Style Blade Type, Encased

Description

Provides capacitance at a designated frequency of 1800 pF @ 1 MHz. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Can endure surge current levels recorded at 40 kA. Presents the energy rating measured at 1050J. Maximum signal delay 1.32 kV at voltage for timing-sensitive applications. Highest AC voltage 750 V for secure operation. Highest DC voltage 970 V for safe electronic circuits. Mounting style Chassis Mount for structural integrity. Total circuits 1 for electrical or electronic designs. Operating temperature -55°C ~ 85°C (TA) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case Blade Type, Encased providing mechanical and thermal shielding. Product condition Active for availability and lifecycle. Product or component classification series DB. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Peak varistor voltage 1.32 kV for protective devices. Lowest varistor voltage 1.08 kV for protective devices. Standard varistor voltage 1.2 kV for circuit safeguarding. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters.

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