Attribute
Description
Manufacturer Part Number
GB02SLT12-214
Manufacturer
Description
SIC SCHOTTKY DIODE 1200V 2A
Manufacturer Lead Time
10 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 1200V (1.2kV) | |
| Average DC Output Current | 2A (DC) | |
| Forward Voltage (Vf) | 1.8V @ 2A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 50µA @ 1200V | |
| Capacitance at Voltage and Frequency | 131pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | 2.3°C/W Jc | |
| Junction Temp Range | -55°C ~ 175°C | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.8V @ 2A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 131pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 2A (DC). Includes diode type indicated as Silicon Carbide Schottky. Resistance in the on-state 2.3°C/W Jc for efficient conduction. Junction operating temperature -55°C ~ 175°C for component protection. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Thermal resistance value 2.3°C/W Jc for temperature regulation. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
