BAT 64 E6327
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 40V | |
| Average DC Output Current | 120mA | |
| Forward Voltage (Vf) | 750mV @ 100mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 5ns | |
| Reverse Leakage Current @ Vr | 2µA @ 30V | |
| Capacitance at Voltage and Frequency | 6pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | 255°C/W Jl | |
| Junction Temp Range | 150°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 750mV @ 100mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 6pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 120mA. Includes diode type indicated as Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 255°C/W Jl for efficient conduction. Junction operating temperature 150°C (Max) for component protection. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Reverse recovery duration 5ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 255°C/W Jl for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
