DSEI60-10A
Data Sheet
Attribute
Description
Manufacturer Part Number
DSEI60-10A
Manufacturer
Description
DSEI Series 1000 Vrrm 60 A 2.3 Vf Fast Recovery Epitaxial Di...
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 1000V (1kV) | |
| Average DC Output Current | 60A | |
| Forward Voltage (Vf) | 2.3V @ 60A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 50ns | |
| Reverse Leakage Current @ Vr | 3mA @ 1000V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 0.25°C/W Cs | |
| Junction Temp Range | -40°C ~ 150°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-2 |
Description
Measures resistance at forward current 2.3V @ 60A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 60A. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Resistance in the on-state 0.25°C/W Cs for efficient conduction. Junction operating temperature -40°C ~ 150°C for component protection. Enclosure/case TO-247-2 providing mechanical and thermal shielding. Reverse recovery duration 50ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 0.25°C/W Cs for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
