1N4448X-TP
Data Sheet
Stock: 80000
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 80000 | ₹ 2.87 | ₹ 2,29,600.00 |
| 8000 | ₹ 3.12 | ₹ 24,960.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 75V | |
| Average DC Output Current | 250mA | |
| Forward Voltage (Vf) | 1.25V @ 150mA | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 4ns | |
| Reverse Leakage Current @ Vr | 2.5µA @ 75V | |
| Capacitance at Voltage and Frequency | 4pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 625°C/W Ja | |
| Junction Temp Range | -65°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-79, SOD-523 |
Description
Measures resistance at forward current 1.25V @ 150mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 4pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 250mA. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 625°C/W Ja for efficient conduction. Junction operating temperature -65°C ~ 150°C for component protection. Enclosure/case SC-79, SOD-523 providing mechanical and thermal shielding. Reverse recovery duration 4ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 625°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
