BAT42WS-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
BAT42WS-TP
Manufacturer
Description
Schottky barrier diode
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 30V | |
| Average DC Output Current | 100mA | |
| Forward Voltage (Vf) | 1V @ 200mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 5ns | |
| Reverse Leakage Current @ Vr | 500nA @ 25V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 625°C/W Ja | |
| Junction Temp Range | -55°C ~ 125°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-76, SOD-323 |
Description
Measures resistance at forward current 1V @ 200mA for LED or diode evaluation. Delivers average rectified current (Io) recorded at 100mA. Includes diode type indicated as Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 625°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 125°C for component protection. Enclosure/case SC-76, SOD-323 providing mechanical and thermal shielding. Reverse recovery duration 5ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 625°C/W Ja for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
