HER208G-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
HER208G-TP
Manufacturer
Description
Diodes Rectifiers - Single,
1000V (1kV),
2A
Note :
GST will not be applied to orders shipping outside of India
Stock: 4000
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 4000 | ₹ 4.74 | ₹ 18,960.00 |
| 12000 | ₹ 4.64 | ₹ 55,680.00 |
| 20000 | ₹ 4.58 | ₹ 91,600.00 |
| 40000 | ₹ 4.51 | ₹ 1,80,400.00 |
| 80000 | ₹ 4.40 | ₹ 3,52,000.00 |
Stock: 8000
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 8000 | ₹ 5.22 | ₹ 41,760.00 |
| 4000 | ₹ 5.65 | ₹ 22,600.00 |
Stock: 10782
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 24.92 | ₹ 24.92 |
| 10 | ₹ 15.40 | ₹ 154.00 |
| 100 | ₹ 9.34 | ₹ 934.00 |
| 500 | ₹ 7.30 | ₹ 3,650.00 |
| 1000 | ₹ 6.32 | ₹ 6,320.00 |
| 2000 | ₹ 5.79 | ₹ 11,580.00 |
| 4000 | ₹ 3.29 | ₹ 13,160.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 1000V (1kV) | |
| Average DC Output Current | 2A | |
| Forward Voltage (Vf) | 1.7V @ 2A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 75ns | |
| Reverse Leakage Current @ Vr | 5µA @ 1000V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | - | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | DO-204AC, DO-15, Axial |
Description
Measures resistance at forward current 1.7V @ 2A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 2A. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case DO-204AC, DO-15, Axial providing mechanical and thermal shielding. Reverse recovery duration 75ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Peak Vce(on) at Vge Standard for transistor parameters.
