JAN1N5807
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 50V | |
| Average DC Output Current | 6A | |
| Forward Voltage (Vf) | 875mV @ 4A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 30ns | |
| Reverse Leakage Current @ Vr | 5µA @ 50V | |
| Capacitance at Voltage and Frequency | 60pF @ 10V, 1MHz | |
| Heat Dissipation Resistance | 22°C/W Jl | |
| Junction Temp Range | -65°C ~ 175°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | B, Axial |
Description
Measures resistance at forward current 875mV @ 4A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 60pF @ 10V, 1MHz. Delivers average rectified current (Io) recorded at 6A. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Resistance in the on-state 22°C/W Jl for efficient conduction. Junction operating temperature -65°C ~ 175°C for component protection. Enclosure/case B, Axial providing mechanical and thermal shielding. Reverse recovery duration 30ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 22°C/W Jl for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.