APT10SCD65KCT
Data Sheet
Attribute
Description
Manufacturer Part Number
APT10SCD65KCT
Manufacturer
Description
Diodes Rectifiers - Single,
650V,
17A
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 650V | |
| Average DC Output Current | 17A | |
| Forward Voltage (Vf) | 1.8V @ 10A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 200µA @ 650V | |
| Capacitance at Voltage and Frequency | 300pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | - | |
| Junction Temp Range | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-2 |
Description
Measures resistance at forward current 1.8V @ 10A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 300pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 17A. Includes diode type indicated as Silicon Carbide Schottky. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-2 providing mechanical and thermal shielding. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
