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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 40V | |
| Average DC Output Current | 2A | |
| Forward Voltage (Vf) | 535mV @ 2A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 85ns | |
| Reverse Leakage Current @ Vr | 100µA @ 40V | |
| Capacitance at Voltage and Frequency | 270pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | 10°C/W Jl | |
| Junction Temp Range | 150°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-UDFN Exposed Pad |
Description
Measures resistance at forward current 535mV @ 2A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 270pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 2A. Includes diode type indicated as Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 10°C/W Jl for efficient conduction. Junction operating temperature 150°C (Max) for component protection. Enclosure/case 3-UDFN Exposed Pad providing mechanical and thermal shielding. Reverse recovery duration 85ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 10°C/W Jl for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
