QH08TZ600
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 600V | |
| Average DC Output Current | 8A | |
| Forward Voltage (Vf) | 3.15V @ 8A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 11.1ns | |
| Reverse Leakage Current @ Vr | 250µA @ 600V | |
| Capacitance at Voltage and Frequency | 25pF @ 10V, 1MHz | |
| Heat Dissipation Resistance | 2.8°C/W Jc | |
| Junction Temp Range | 150°C (Max) | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-2 |
Description
Measures resistance at forward current 3.15V @ 8A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 25pF @ 10V, 1MHz. Delivers average rectified current (Io) recorded at 8A. Includes diode type indicated as Schottky. Mounting style Through Hole for structural integrity. Resistance in the on-state 2.8°C/W Jc for efficient conduction. Junction operating temperature 150°C (Max) for component protection. Enclosure/case TO-220-2 providing mechanical and thermal shielding. Reverse recovery duration 11.1ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 2.8°C/W Jc for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
