RF2L6STE25
Data Sheet
Attribute
Description
Manufacturer Part Number
RF2L6STE25
Manufacturer
Description
Schottky barrier diode
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 600V | |
| Average DC Output Current | 1.5A | |
| Forward Voltage (Vf) | 1.55V @ 1.5A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 35ns | |
| Reverse Leakage Current @ Vr | 10µA @ 600V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 23°C/W Jl | |
| Junction Temp Range | 150°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | DO-214AC, SMA |
Description
Measures resistance at forward current 1.55V @ 1.5A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 1.5A. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 23°C/W Jl for efficient conduction. Junction operating temperature 150°C (Max) for component protection. Enclosure/case DO-214AC, SMA providing mechanical and thermal shielding. Reverse recovery duration 35ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 23°C/W Jl for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
