Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 1000V (1kV) | |
| Average DC Output Current | 1A | |
| Forward Voltage (Vf) | 1.1V @ 1A | |
| Operational Speed Rating | Standard Recovery >500ns, > 200mA (Io) | |
| trr Recovery | 600ns | |
| Reverse Leakage Current @ Vr | 5µA @ 1000V | |
| Capacitance at Voltage and Frequency | 10pF @ 4V, 1MHz | |
| Heat Dissipation Resistance | 67°C/W Ja | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | MPG06, Axial |
Description
Measures resistance at forward current 1.1V @ 1A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 10pF @ 4V, 1MHz. Delivers average rectified current (Io) recorded at 1A. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Resistance in the on-state 67°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case MPG06, Axial providing mechanical and thermal shielding. Reverse recovery duration 600ns for switching diodes. Velocity Standard Recovery >500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 67°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
