Attribute
Description
Manufacturer Part Number
V8P10-M3/86A
Manufacturer
Description
Schottky Rectifier;100V;8A;Surf Mt TrenchMOS;TO-277A(SMPC);H...
Note :
GST will not be applied to orders shipping outside of India
Stock: 13500
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 13500 | ₹ 32.17 | ₹ 4,34,295.00 |
| 1500 | ₹ 34.86 | ₹ 52,290.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 100V | |
| Average DC Output Current | 8A | |
| Forward Voltage (Vf) | 680mV @ 8A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | - | |
| Reverse Leakage Current @ Vr | 70µA @ 100V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 3°C/W Jl | |
| Junction Temp Range | -40°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-277, 3-PowerDFN |
Description
Measures resistance at forward current 680mV @ 8A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 8A. Includes diode type indicated as Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 3°C/W Jl for efficient conduction. Junction operating temperature -40°C ~ 150°C for component protection. Enclosure/case TO-277, 3-PowerDFN providing mechanical and thermal shielding. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 3°C/W Jl for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
