ZVP2110GTA
Data Sheet
Attribute
Description
Manufacturer Part Number
ZVP2110GTA
Manufacturer
Description
ZVP2110G Series 100 V 8 Ohm P-Channel Enhancement Mode Verti...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 310mA (Ta) | |
| Max On-State Resistance | 8 Ohm @ 375mA, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 100pF @ 25V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 310mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. The input capacitance is rated at 100pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id and Vgs 8 Ohm @ 375mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 1mA for MOSFET threshold level.
