Attribute
Description
Manufacturer Part Number
MRFE6S9125NBR1
Manufacturer
Description
MOSFET RF N-CH 27W TO-272-4
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | LDMOS | |
| Oscillation Rate Hz | 880MHz | |
| Amplification Factor | 20.2dB | |
| Test Condition Voltage | 28V | |
| Rated Current | 10µA | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 950mA | |
| Output Wattage Rating | 27W | |
| Rated Operating Voltage | 66V | |
| Component Housing Style | TO-272BB |
Description
Measures resistance at forward current 20.2dB for LED or diode evaluation. Evaluated at current levels indicated by 950mA. Provides a current rating of 10µA. Operates at a frequency of 880MHz. Delivers 20.2dB gain to improve signal amplification efficiency. Enclosure/case TO-272BB providing mechanical and thermal shielding. Power output 27W for optimal device performance. Type of transistor LDMOS for circuit architecture. Peak Vce(on) at Vge 20.2dB for transistor parameters. Operating voltage rating 66V for device specifications. Voltage for testing 28V for component assessment.
