MRFE6VP100HR5
Data Sheet
Attribute
Description
Manufacturer Part Number
MRFE6VP100HR5
Manufacturer
Description
TRANS RF H-CH FET LDMOS NI780
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | LDMOS | |
| Oscillation Rate Hz | 1.8MHz ~ 2GHz | |
| Amplification Factor | 26dB | |
| Test Condition Voltage | 50V | |
| Rated Current | - | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 100mA | |
| Output Wattage Rating | 100W | |
| Rated Operating Voltage | 133V | |
| Component Housing Style | NI-780-4 |
Description
Measures resistance at forward current 26dB for LED or diode evaluation. Evaluated at current levels indicated by 100mA. Operates at a frequency of 1.8MHz ~ 2GHz. Delivers 26dB gain to improve signal amplification efficiency. Enclosure/case NI-780-4 providing mechanical and thermal shielding. Power output 100W for optimal device performance. Type of transistor LDMOS for circuit architecture. Peak Vce(on) at Vge 26dB for transistor parameters. Operating voltage rating 133V for device specifications. Voltage for testing 50V for component assessment.
