Stock: 1
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 241.19 | ₹ 241.19 |
| 10 | ₹ 155.75 | ₹ 1,557.50 |
| 100 | ₹ 111.25 | ₹ 11,125.00 |
| 500 | ₹ 93.45 | ₹ 46,725.00 |
| 1000 | ₹ 86.15 | ₹ 86,150.00 |
| 5000 | ₹ 73.16 | ₹ 3,65,800.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 25.4A | |
| Max On-State Resistance | 3 mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 1.9V @ 345µA | |
| Gate Charge at Vgs | 186nC @ 10V | |
| Input Cap at Vds | 14000pF @ 15V | |
| Maximum Power Handling | 2.5W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 25.4A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 186nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 14000pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 2.5W for device protection. Peak Rds(on) at Id 186nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3 mOhm @ 50A, 10V for MOSFET criteria. Peak Vgs(th) at Id 1.9V @ 345µA for MOSFET threshold level.
