Stock: 9593
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 137.95 | ₹ 137.95 |
| 10 | ₹ 86.86 | ₹ 868.60 |
| 100 | ₹ 57.58 | ₹ 5,758.00 |
| 500 | ₹ 45.48 | ₹ 22,740.00 |
| 1000 | ₹ 41.03 | ₹ 41,030.00 |
| 2500 | ₹ 37.65 | ₹ 94,125.00 |
| 5000 | ₹ 33.91 | ₹ 1,69,550.00 |
| 10000 | ₹ 32.84 | ₹ 3,28,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 14.9A | |
| Max On-State Resistance | 8.4 mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 1.9V @ 105µA | |
| Gate Charge at Vgs | 58nC @ 10V | |
| Input Cap at Vds | 4785pF @ 15V | |
| Maximum Power Handling | 69W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 14.9A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 58nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4785pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 69W for device protection. Peak Rds(on) at Id 58nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 8.4 mOhm @ 50A, 10V for MOSFET criteria. Peak Vgs(th) at Id 1.9V @ 105µA for MOSFET threshold level.
