Stock: 1762
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 223.39 | ₹ 223.39 |
| 10 | ₹ 144.18 | ₹ 1,441.80 |
| 100 | ₹ 98.79 | ₹ 9,879.00 |
| 500 | ₹ 84.28 | ₹ 42,140.00 |
| 1000 | ₹ 79.74 | ₹ 79,740.00 |
| 2500 | ₹ 63.81 | ₹ 1,59,525.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 12.6A | |
| Max On-State Resistance | 8 mOhm @ 14.9A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Gate Charge at Vgs | 136nC @ 10V | |
| Input Cap at Vds | 5890pF @ 25V | |
| Maximum Power Handling | 1.79W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 12.6A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 136nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 5890pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 1.79W for device protection. Peak Rds(on) at Id 136nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 8 mOhm @ 14.9A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
