Stock: 409
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 351.55 | ₹ 351.55 |
| 10 | ₹ 203.81 | ₹ 2,038.10 |
| 100 | ₹ 168.21 | ₹ 16,821.00 |
| 500 | ₹ 125.49 | ₹ 62,745.00 |
| 1000 | ₹ 114.81 | ₹ 1,14,810.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 84A (Tc) | |
| Max On-State Resistance | 3.2 mOhm @ 80A, 10V | |
| Max Threshold Gate Voltage | 4V @ 118µA | |
| Gate Charge at Vgs | 165nC @ 10V | |
| Input Cap at Vds | 13000pF @ 30V | |
| Maximum Power Handling | 41W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 84A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 165nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 13000pF @ 30V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 41W for device protection. Peak Rds(on) at Id 165nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.2 mOhm @ 80A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 118µA for MOSFET threshold level.
