Stock: 500
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 323.96 | ₹ 323.96 |
| 10 | ₹ 164.65 | ₹ 1,646.50 |
| 100 | ₹ 148.63 | ₹ 14,863.00 |
| 500 | ₹ 145.07 | ₹ 72,535.00 |
| 1000 | ₹ 110.36 | ₹ 1,10,360.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 120A (Tc) | |
| Max On-State Resistance | 1.9 mOhm @ 100A, 10V | |
| Max Threshold Gate Voltage | 4V @ 140µA | |
| Gate Charge at Vgs | 176nC @ 10V | |
| Input Cap at Vds | 14000pF @ 25V | |
| Maximum Power Handling | 188W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 120A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 176nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 14000pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 188W for device protection. Peak Rds(on) at Id 176nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.9 mOhm @ 100A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 140µA for MOSFET threshold level.
