Stock: 455
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 647.92 | ₹ 647.92 |
| 10 | ₹ 348.88 | ₹ 3,488.80 |
| 100 | ₹ 320.40 | ₹ 32,040.00 |
| 500 | ₹ 272.34 | ₹ 1,36,170.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 31A (Tc) | |
| Max On-State Resistance | 99 mOhm @ 18A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 1.2mA | |
| Gate Charge at Vgs | 80nC @ 10V | |
| Input Cap at Vds | 2800pF @ 100V | |
| Maximum Power Handling | 255W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 31A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 80nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2800pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 255W for device protection. Peak Rds(on) at Id 80nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 99 mOhm @ 18A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 1.2mA for MOSFET threshold level.
