Stock: 249
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 185.12 | ₹ 185.12 |
| 10 | ₹ 133.50 | ₹ 1,335.00 |
| 100 | ₹ 105.91 | ₹ 10,591.00 |
| 500 | ₹ 89.00 | ₹ 44,500.00 |
| 1000 | ₹ 76.54 | ₹ 76,540.00 |
| 2500 | ₹ 72.71 | ₹ 1,81,775.00 |
| 5000 | ₹ 70.31 | ₹ 3,51,550.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 18.5A | |
| Max On-State Resistance | 190 mOhm @ 6.2A, 13V | |
| Max Threshold Gate Voltage | 3.5V @ 510µA | |
| Gate Charge at Vgs | 6.1nC @ 10V | |
| Input Cap at Vds | 1137pF @ 100V | |
| Maximum Power Handling | 32W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 18.5A at 25°C. Supports Vdss drain-to-source voltage rated at 500V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 6.1nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1137pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 32W for device protection. Peak Rds(on) at Id 6.1nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 190 mOhm @ 6.2A, 13V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 510µA for MOSFET threshold level.
