Stock: 8750
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 103 | ₹ 300.86 | ₹ 30,988.58 |
| 82 | ₹ 313.40 | ₹ 25,698.80 |
| 64 | ₹ 325.94 | ₹ 20,860.16 |
| 44 | ₹ 351.01 | ₹ 15,444.44 |
| 29 | ₹ 363.55 | ₹ 10,542.95 |
| 14 | ₹ 388.61 | ₹ 5,440.54 |
Stock: 13
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1500 | ₹ 320.35 | ₹ 4,80,525.00 |
| 750 | ₹ 330.11 | ₹ 2,47,582.50 |
| 300 | ₹ 339.56 | ₹ 1,01,868.00 |
| 150 | ₹ 358.77 | ₹ 53,815.50 |
| 30 | ₹ 365.94 | ₹ 10,978.20 |
Stock: 100000
Distributor: 126
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 389.64 | ₹ 389.64 |
Stock: 2022
Distributor: 154
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 762.73 | ₹ 762.73 |
| 10 | ₹ 668.39 | ₹ 6,683.90 |
| 100 | ₹ 573.16 | ₹ 57,316.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 700V | |
| Continuous Drain Current at 25C | 43.3A (Tc) | |
| Max On-State Resistance | 80 mOhm @ 17.6A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 1.76mA | |
| Gate Charge at Vgs | 170nC @ 10V | |
| Input Cap at Vds | 5030pF @ 100V | |
| Maximum Power Handling | 391W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 43.3A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 700V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 170nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 5030pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 391W for device protection. Peak Rds(on) at Id 170nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 80 mOhm @ 17.6A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4.5V @ 1.76mA for MOSFET threshold level.
