SPA17N80C3

SPA17N80C3
Attribute
Description
Manufacturer Part Number
SPA17N80C3
Description
MOSFET, N, COOLMOS, TO-220FP; Transistor Polarity:N Channel;...
Note : GST will not be applied to orders shipping outside of India

Stock:
18886

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
141 ₹ 219.37 ₹ 30,931.17
106 ₹ 244.67 ₹ 25,935.02
82 ₹ 253.12 ₹ 20,755.84
59 ₹ 261.55 ₹ 15,431.45
39 ₹ 269.98 ₹ 10,529.22
16 ₹ 329.04 ₹ 5,264.64

Stock:
3422

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 435.21 ₹ 435.21
10 ₹ 288.36 ₹ 2,883.60
100 ₹ 229.62 ₹ 22,962.00
500 ₹ 200.25 ₹ 1,00,125.00
1000 ₹ 173.55 ₹ 1,73,550.00
2500 ₹ 163.76 ₹ 4,09,400.00

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 800V
Continuous Drain Current at 25C 17A (Tc)
Max On-State Resistance 290 mOhm @ 11A, 10V
Max Threshold Gate Voltage 3.9V @ 1mA
Gate Charge at Vgs 177nC @ 10V
Input Cap at Vds 2320pF @ 25V
Maximum Power Handling 42W
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 17A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 800V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 177nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2320pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 42W for device protection. Peak Rds(on) at Id 177nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 290 mOhm @ 11A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 1mA for MOSFET threshold level.

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