Stock: 2000
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 335 | ₹ 92.83 | ₹ 31,098.05 |
| 250 | ₹ 103.52 | ₹ 25,880.00 |
| 195 | ₹ 107.11 | ₹ 20,886.45 |
| 140 | ₹ 110.71 | ₹ 15,499.40 |
| 90 | ₹ 114.31 | ₹ 10,287.90 |
| 40 | ₹ 139.28 | ₹ 5,571.20 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 11A (Tc) | |
| Max On-State Resistance | 380 mOhm @ 7A, 10V | |
| Max Threshold Gate Voltage | 3.9V @ 500µA | |
| Gate Charge at Vgs | 60nC @ 10V | |
| Input Cap at Vds | 1200pF @ 25V | |
| Maximum Power Handling | 125W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 11A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 60nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1200pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 125W for device protection. Peak Rds(on) at Id 60nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 380 mOhm @ 7A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 500µA for MOSFET threshold level.
