MIC94050BM4 TR
Data Sheet
Attribute
Description
Manufacturer Part Number
MIC94050BM4 TR
Manufacturer
Description
MOSFET P-CH 6V 1.8A SOT-143
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 6V | |
| Continuous Drain Current at 25C | 1.8A (Ta) | |
| Max On-State Resistance | 160 mOhm @ 100mA, 4.5V | |
| Max Threshold Gate Voltage | 1.2V @ 250µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 600pF @ 5.5V | |
| Maximum Power Handling | 568mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-253-4, TO-253AA |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 1.8A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 6V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. The input capacitance is rated at 600pF @ 5.5V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-253-4, TO-253AA providing mechanical and thermal shielding. Peak power 568mW for device protection. Peak Rds(on) at Id and Vgs 160 mOhm @ 100mA, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.2V @ 250µA for MOSFET threshold level.
