2N6764T1

2N6764T1

Data Sheet

Attribute
Description
Manufacturer Part Number
2N6764T1
Description
TRANS NPN TO-204AE
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 100V
Continuous Drain Current at 25C 38A (Ta)
Max On-State Resistance -
Max Threshold Gate Voltage 4V @ 250µA
Gate Charge at Vgs 125nC @ 10V
Input Cap at Vds -
Maximum Power Handling 4W
Attachment Mounting Style Through Hole
Component Housing Style TO-204AE

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 38A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 125nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Mounting style Through Hole for structural integrity. Enclosure/case TO-204AE providing mechanical and thermal shielding. Peak power 4W for device protection. Peak Rds(on) at Id 125nC @ 10V for MOSFET efficiency. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.

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