Stock: 1781
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 835 | ₹ 10.68 | ₹ 8,917.80 |
| 168 | ₹ 16.02 | ₹ 2,691.36 |
| 26 | ₹ 26.70 | ₹ 694.20 |
| 9 | ₹ 53.40 | ₹ 480.60 |
Stock: 1424
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 209 | ₹ 14.24 | ₹ 2,976.16 |
| 26 | ₹ 21.36 | ₹ 555.36 |
| 1 | ₹ 71.20 | ₹ 71.20 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 360mA (Ta) | |
| Max On-State Resistance | 1.6 Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 2.4V @ 250µA | |
| Gate Charge at Vgs | 0.8nC @ 4.5V | |
| Input Cap at Vds | 50pF @ 10V | |
| Maximum Power Handling | 350mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 360mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 0.8nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 50pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 350mW for device protection. Peak Rds(on) at Id 0.8nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.6 Ohm @ 500mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.4V @ 250µA for MOSFET threshold level.