Attribute
Description
Manufacturer Part Number
BUK9605-30A,118
Manufacturer
Description
MOSFET N-CH 30V 75A D2PAK
Note :
GST will not be applied to orders shipping outside of India
Stock: 800
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 107.69 | ₹ 10,76,900.00 |
| 1000 | ₹ 113.92 | ₹ 1,13,920.00 |
| 500 | ₹ 121.04 | ₹ 60,520.00 |
| 100 | ₹ 127.27 | ₹ 12,727.00 |
| 25 | ₹ 134.39 | ₹ 3,359.75 |
Stock: 800
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 121.04 | ₹ 12,10,400.00 |
| 1000 | ₹ 129.05 | ₹ 1,29,050.00 |
| 500 | ₹ 136.17 | ₹ 68,085.00 |
| 100 | ₹ 144.18 | ₹ 14,418.00 |
| 25 | ₹ 151.30 | ₹ 3,782.50 |
Stock: 800
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 151.30 | ₹ 15,13,000.00 |
| 1000 | ₹ 161.31 | ₹ 1,61,310.00 |
| 500 | ₹ 170.21 | ₹ 85,105.00 |
| 186 | ₹ 180.22 | ₹ 33,520.92 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 75A | |
| Max On-State Resistance | 4.6 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 8600pF @ 25V | |
| Maximum Power Handling | 230W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 75A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 8600pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 230W for device protection. Peak Rds(on) at Id and Vgs 4.6 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.
