BUK9MJT-55PRF,518
Data Sheet
Attribute
Description
Manufacturer Part Number
BUK9MJT-55PRF,518
Manufacturer
Description
MOSFET N-CH DUAL 55V 20SOIC
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 55V | |
| Continuous Drain Current at 25C | - | |
| Max On-State Resistance | 13.8 mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 20-SOIC (0.295", 7.50mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports Vdss drain-to-source voltage rated at 55V. Accommodates FET classification identified as 2 N-Channel (Dual). Mounting style Surface Mount for structural integrity. Enclosure/case 20-SOIC (0.295", 7.50mm Width) providing mechanical and thermal shielding. Peak Rds(on) at Id and Vgs 13.8 mOhm @ 10A, 10V for MOSFET criteria.
