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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | P-Channel | |
| Breakdown VBR GSS | 30V | |
| Drain-Source Breakdown Volts | 30V | |
| Drain Current at Vds | 7mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 3V @ 10nA | |
| Maximum Power Handling | 400mW | |
| Input Cap at Vds | 8pF @ 10V (VGS) | |
| RDS On Resistance | 125 Ohm | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Description
Measures resistance at forward current P-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 7mA @ 15V. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as P-Channel. The input capacitance is rated at 8pF @ 10V (VGS) at Vds for optimal performance. Mounting style Through Hole for structural integrity. Resistance in the on-state 125 Ohm for efficient conduction. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads providing mechanical and thermal shielding. Peak power 400mW for device protection. Peak Rds(on) at Id 3V @ 10nA for MOSFET efficiency. RDS(on) resistance value 125 Ohm for MOSFET operation. V(BR)GSS breakdown level 30V for semiconductors. Cutoff voltage VGS off at Id 3V @ 10nA for MOSFETs.
