Stock: 348
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 0.15 | ₹ 15,000.00 |
| 10000 | ₹ 0.18 | ₹ 1,800.00 |
| 1000 | ₹ 0.20 | ₹ 200.00 |
| 500 | ₹ 0.21 | ₹ 105.00 |
| 100 | ₹ 0.24 | ₹ 24.00 |
Stock: 348
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 16.44 | ₹ 16,44,000.00 |
| 10000 | ₹ 19.62 | ₹ 1,96,200.00 |
| 1000 | ₹ 22.01 | ₹ 22,010.00 |
| 500 | ₹ 23.86 | ₹ 11,930.00 |
| 100 | ₹ 26.51 | ₹ 2,651.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 13.8A (Ta) | |
| Max On-State Resistance | 20 mOhm @ 8A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Gate Charge at Vgs | 10.7nC @ 5V | |
| Input Cap at Vds | 752pF @ 15V | |
| Maximum Power Handling | 6.25W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 13.8A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 10.7nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 752pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 6.25W for device protection. Peak Rds(on) at Id 10.7nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 20 mOhm @ 8A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
