PMT200EN,115
Data Sheet
Stock: 100000
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 0.08 | ₹ 8,000.00 |
| 10000 | ₹ 0.10 | ₹ 1,000.00 |
| 1000 | ₹ 0.11 | ₹ 110.00 |
| 500 | ₹ 0.12 | ₹ 60.00 |
| 100 | ₹ 0.13 | ₹ 13.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 1.8A | |
| Max On-State Resistance | 235 mOhm @ 1.5A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Gate Charge at Vgs | 10nC @ 10V | |
| Input Cap at Vds | 475pF @ 80V | |
| Maximum Power Handling | 800mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 1.8A at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 10nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 475pF @ 80V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 800mW for device protection. Peak Rds(on) at Id 10nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 235 mOhm @ 1.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
