Stock: 6867
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 102.35 | ₹ 10,23,500.00 |
| 1000 | ₹ 108.58 | ₹ 1,08,580.00 |
| 500 | ₹ 115.70 | ₹ 57,850.00 |
| 100 | ₹ 121.93 | ₹ 12,193.00 |
| 25 | ₹ 128.16 | ₹ 3,204.00 |
Stock: 400
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 142.40 | ₹ 14,24,000.00 |
| 1000 | ₹ 151.30 | ₹ 1,51,300.00 |
| 500 | ₹ 160.20 | ₹ 80,100.00 |
| 198 | ₹ 169.10 | ₹ 33,481.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 100A (Tmb) | |
| Max On-State Resistance | 2.9 mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 71nC @ 10V | |
| Input Cap at Vds | 4491pF @ 20V | |
| Maximum Power Handling | 211W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A (Tmb) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 71nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4491pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 211W for device protection. Peak Rds(on) at Id 71nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.9 mOhm @ 10A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
