2SK3666-3-TB-E
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | - | |
| Drain-Source Breakdown Volts | 30V | |
| Drain Current at Vds | 1.2mA @ 10V | |
| Drain Current Id | 10mA | |
| Cutoff VGS at Id | 180mV @ 1µA | |
| Maximum Power Handling | 200mW | |
| Input Cap at Vds | 4pF @ 10V | |
| RDS On Resistance | 200 Ohm | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 1.2mA @ 10V. Rated for drain current Id at 10mA. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 4pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Resistance in the on-state 200 Ohm for efficient conduction. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 200mW for device protection. Peak Rds(on) at Id 180mV @ 1µA for MOSFET efficiency. RDS(on) resistance value 200 Ohm for MOSFET operation. Cutoff voltage VGS off at Id 180mV @ 1µA for MOSFETs.
