Attribute
Description
Manufacturer Part Number
MCH6602-TL-E
Manufacturer
Description
MOSFET N-CH DUAL 30V 350MA MCPH6
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 350mA | |
| Max On-State Resistance | 3.7 Ohm @ 80mA, 4V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 1.58nC @ 10V | |
| Input Cap at Vds | 7pF @ 10V | |
| Maximum Power Handling | 800mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-SMD, No Lead |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 350mA at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 1.58nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 7pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-SMD, No Lead providing mechanical and thermal shielding. Peak power 800mW for device protection. Peak Rds(on) at Id 1.58nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.7 Ohm @ 80mA, 4V for MOSFET criteria.
