VEC2315-TL-H

VEC2315-TL-H
Attribute
Description
Manufacturer Part Number
VEC2315-TL-H
Manufacturer
Description
MOSFET P-CH 60V 2.5A VEC8
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Field Effect Transistor Type 2 P-Channel (Dual)
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 2.5A
Max On-State Resistance 137 mOhm @ 1.5A, 10V
Max Threshold Gate Voltage -
Gate Charge at Vgs 11nC @ 10V
Input Cap at Vds 420pF @ 20V
Maximum Power Handling 900mW
Attachment Mounting Style Surface Mount
Component Housing Style 8-SMD, Flat Lead

Description

Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 2.5A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as 2 P-Channel (Dual). Upholds 11nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 420pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SMD, Flat Lead providing mechanical and thermal shielding. Peak power 900mW for device protection. Peak Rds(on) at Id 11nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 137 mOhm @ 1.5A, 10V for MOSFET criteria.

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