FSS275-TL-E

FSS275-TL-E

Data Sheet

Attribute
Description
Manufacturer Part Number
FSS275-TL-E
Description
MOSFET N-CH 60V 6A 8-SOP
Note : GST will not be applied to orders shipping outside of India

Stock:
66000

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 33.53 ₹ 33,53,000.00
10000 ₹ 40.01 ₹ 4,00,100.00
1000 ₹ 44.88 ₹ 44,880.00
500 ₹ 48.67 ₹ 24,335.00
100 ₹ 54.08 ₹ 5,408.00

Stock:
66000

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
100000 ₹ 41.91 ₹ 41,91,000.00
10000 ₹ 50.02 ₹ 5,00,200.00
1000 ₹ 56.11 ₹ 56,110.00
549 ₹ 60.83 ₹ 33,395.67
494 ₹ 67.60 ₹ 33,394.40

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 6A (Ta)
Max On-State Resistance 43 mOhm @ 3A, 10V
Max Threshold Gate Voltage -
Gate Charge at Vgs 21nC @ 10V
Input Cap at Vds 1100pF @ 20V
Maximum Power Handling 1.9W
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.173", 4.40mm Width)

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 6A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 21nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1100pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.173", 4.40mm Width) providing mechanical and thermal shielding. Peak power 1.9W for device protection. Peak Rds(on) at Id 21nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 43 mOhm @ 3A, 10V for MOSFET criteria.

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