SI1034X-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI1034X-T1-GE3
Manufacturer
Description
MOSFET DL N-CH 20V 180MA SC89-6
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 180mA | |
| Max On-State Resistance | 5 Ohm @ 200mA, 4.5V | |
| Max Threshold Gate Voltage | 1.2V @ 250µA | |
| Gate Charge at Vgs | 0.75nC @ 4.5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 250mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-563, SOT-666 |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 180mA at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 0.75nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-563, SOT-666 providing mechanical and thermal shielding. Peak power 250mW for device protection. Peak Rds(on) at Id 0.75nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5 Ohm @ 200mA, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.2V @ 250µA for MOSFET threshold level.
