SI6463BDQ-T1-GE3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 6.2A (Ta) | |
| Max On-State Resistance | 15 mOhm @ 7.4A, 4.5V | |
| Max Threshold Gate Voltage | 800mV @ 250µA | |
| Gate Charge at Vgs | 60nC @ 5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.05W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TSSOP (0.173", 4.40mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 6.2A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 60nC @ 5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case 8-TSSOP (0.173", 4.40mm Width) providing mechanical and thermal shielding. Peak power 1.05W for device protection. Peak Rds(on) at Id 60nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 15 mOhm @ 7.4A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 800mV @ 250µA for MOSFET threshold level.
