SI7911DN-T1-E3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI7911DN-T1-E3
Manufacturer
Description
MOSFET DUAL P-CH 20V 1212-8
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 P-Channel (Dual) | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4.2A | |
| Max On-State Resistance | 51 mOhm @ 5.7A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Gate Charge at Vgs | 15nC @ 4.5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.3W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | PowerPAK® 1212-8 Dual |
Description
Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 4.2A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as 2 P-Channel (Dual). Upholds 15nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case PowerPAK® 1212-8 Dual providing mechanical and thermal shielding. Peak power 1.3W for device protection. Peak Rds(on) at Id 15nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 51 mOhm @ 5.7A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
