SST5484-E3
Data Sheet
Attribute
Description
Manufacturer Part Number
SST5484-E3
Manufacturer
Description
Junction Field Effect Transistors,
25V,
350mW
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 25V | |
| Drain-Source Breakdown Volts | - | |
| Drain Current at Vds | 1mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 300mV @ 10nA | |
| Maximum Power Handling | 350mW | |
| Input Cap at Vds | 5pF @ 15V | |
| RDS On Resistance | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 1mA @ 15V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 5pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 350mW for device protection. Peak Rds(on) at Id 300mV @ 10nA for MOSFET efficiency. V(BR)GSS breakdown level 25V for semiconductors. Cutoff voltage VGS off at Id 300mV @ 10nA for MOSFETs.