BDW74B-S
Data Sheet
Attribute
Description
Manufacturer Part Number
BDW74B-S
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
8A,
80V
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 8A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A | |
| Collector Cutoff Max | 500µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V | |
| Maximum Power Handling | 2W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 4V @ 80mA, 8A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 4V @ 80mA, 8A for transistor parameters. Highest collector-emitter breakdown voltage 80V.